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| brand | model | QQ email | Personal official website |
| ABB | 5SHY35L4510 3BHE014105R0001 |
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| weight | Specifications | bbbephone |
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| 10kg | 15cm | +86 18030177759 |
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You should always make sure to properly ground the 369-HI-0-M-0-0-E. You must connect both the Safety ground and the Filter ground (terminal 126 and 123 respectively) to the main Ground Bus to properly ground the unit.
Frequently Asked Questions about 369-HI-0-M-0-0-E
What are the control power specifications of the 369-LO-0-M-F-E-0-E motor management relay?
The 369-LO-0-M-F-E-0-E has a low (LO) control power specification. The VDC range is from 20-60 and the VAC control power range for this 369 Multilin motor management relay is 20 to 48. This low specification is in comparison to the high (HI) option, which is 50-300 VDC and 60 to 265 VAC control power.
What additional features are present for the 369-LO-0-M-F-E-0-E Multilin General Electric digital relay?
Additional features of the 369-LO-0-M-F-E-0-E are the optional metering package. This package provides three extra configurable analog outputs in addition to the base unit's single analog output. This package also provides the unit with bbbbbs for power and voltage elements with the ability to meter various specifics such as V, kW, etc.
The 369-LO-0-M-F-E-0-E also contains the optional fiber optic port denoted by the (F) option. This data bbbb for the fiber optic is for more harsh environments or for RRTD hook up. The fiber sizes are 50/125, 62.5/125, 100/140, and 200 micrometers. The type of LED emitter is a 820 nm LED with multimode features.
What is the purpose of the optional fiber optic port for the 369-LO-0-M-F-E-0-E?
The purpose of the fiber optic port (option F) for the 369-LO-0-M-F-E-0-E is to allow a remote module RTD to hookup to the motor management relay.369-HI-0-M-0-0-E是GE Multilin制造的电机管理继电器。控制电源为50-300 VDC/40-265 VAC。此继电器上没有可选RTD输入。该装置包括一个可选的计量包。没有可选的光纤端口。该继电器为三相电机及其相关系统提供保护和监控。369可以“学习”各个电机参数，并适应各个应用。为了提高继电器的保护能力，用户可以调整电机浪涌电流、冷却速度和/或加速时间。如果您对该电机管理继电器或相关系列或制造商有任何疑问，请联系AX Control。
设定点键允许用户浏览可编程参数页面标题。实际值键允许用户浏览测量参数页面标题。页面向上和向下键可用于滚动页面标题，查看实际值和设定点。上下对齐键可用于滚动浏览副标题。值向上和向下键允许用户滚动浏览设定点编程模式中的变量。重置键允许用户重置跳闸或锁定报警。输入键可以输入子组或存储更改的设定值。清除键可以退出子组或将更改的设定点返回到其原始值。对于上下文相关的帮助消息，可以随时按帮助键。
应始终确保369-HI-0-M-0-0-E正确接地。必须将安全接地和过滤器接地（分别为端子126和123）连接到主接地母线，以正确接地装置。
关于369-HI-0-M-0-0-E的常见问题
369-LO-0-M-F-E-0-E电机管理继电器的控制电源规格是什么？
369-LO-0-M-F-E-0-E具有低（LO）控制功率规格。VDC范围为20-60，此369 Multilin电机管理继电器的VAC控制功率范围为20至48。此低规格与高（HI）选项相比，后者为50-300 VDC和60-265 VAC控制电源。
369-LO-0-M-F-E-0-E Multilin General Electric数字继电器有哪些附加功能？
369-LO-0-M-F-E-0-E的其他功能是可选的计量包。除了基本单元的单个模拟输出外，该软件包还提供三个额外的可配置模拟输出。该软件包还为装置提供了功率和电压元件的输入，能够测量各种具体参数，如V、kW等。
369-LO-0-M-F-E-0-E还包含由（F）选项表示的可选光纤端口。此光纤数据链路用于更恶劣的环境或RRTD连接。光纤尺寸为50/125、62.5/125、100/140和200微米。LED发射器类型为820 nm LED，具有多模特性。
369-LO-0-M-F-E-0-E的可选光纤端口的用途是什么？
369-LO-0-M-F-E-0-E的光纤端口（选项F）的用途是允许远程模块RTD连接到电机管理继电器。The most popular and commonly used power electronic switch devices are the Bipolar Junction Transistor BJT and the MOSFET. We have already discussed in detail about the working of BJT and the working of MOSFET and how they are used in circuits. But, both these components had some limitations to be used in very high current applications. So, we moved another popular power electronic switching device called the IGBT. You can think of IGBT as a fusion between BJT and MOSFET, these components have the bbbbb characteristics of a BJT and output characteristics of a MOSFET. In this article, we get familiar with the basics of IGBT, how they work, and how to use them in your circuit designs.
IGBT is the short bbbb of Insulated Gate Bipolar Transistor. It is a three-terminal semiconductor switching device that can be used for fast switching with high efficiency in many types of electronic devices. These devices are mostly used in amplifiers for switching/processing complex wave patters with pulse bbbbb modulation (PWM). The typical symbol of IGBT along with its image is shown below.As mentioned earlier an IGBT is a fusion between a BJT and MOSFET. The symbol of the IGBT also represents the same, as you can see the bbbbb side represents a MOSFET with a Gate terminal and the output side represents a BJT with Collector and Emitter. The Collector and the Emitter are the conduction terminals and the gate is the control terminal with which the switching operation is controlled.
IGBT can be constructed with the equivalent circuit that consists of two transistors and MOSFET, as the IGBT posses the output of the below combination of the PNP transistor, NPN transistor, and MOSFET. IGBT combines the low saturation voltage of a transistor with the high bbbbb impedance and switching speed of a MOSFET. The outcome obtained from this combination delivers the output switching and conduction characteristics of a bipolar transistor, but the voltage is controlled like a MOSFET.Since IGBT is the combination of MOSFET and BJT they are also called by different names. The different names of IGBT are Insulated Gate Transistor( IGT), bbbbl Oxide Insulated Gate Transistor (MOSIGT), Gain Modulated Field Effect Transistor (GEMFET), Conductively Modulated Field Effect Transistor (COMFET).IGBT has three terminals attached to three different bbbbl layers, the bbbbl layer of the gate terminal is insulated from the semiconductors by a layer of silicon dioxide (SIO2). IGBT is constructed with 4 layers of semiconductor sandwiched together. The layer closer to the collector is the p+ substrate layer above that is the n- layer, another p layer is kept closer to the emitter and inside the p layer, we have the n+ layers. The junction between the p+ layer and n- layer is called the junction J2 and the junction between the n- layer and the p layer is called the junction J1. The structure of IGBT is shown in the figure below.To understand the working of the IGBT, consider a voltage source VG connected positively to the Gate terminal with respect to the Emitter. Consider other voltage source VCC connected across The Emitter and the Collector, where Collector is kept positive with respect to the Emitter. Due to the voltage source VCC the junction J1 will be forward-biased whereas the junction J2 will be reverse biased. Since J2 is in reverse bias there will not be any current flow inside the IGBT(from collector to emitter).
Initially, consider that there is no voltage applied to the Gate terminal, at this stage the IGBT will be in a non-conductive state. Now if we increase the applied gate voltage, due to the capacitance effect on the SiO2 layer the negative ions will get accumulated on the upper side of the layer and the positive ions will get accumulated on the lower side of the SiO2 layer. This will cause the insertion of negative charge carriers in the p region, higher the applied voltage VG greater the insertion of negatively charged carriers. This will lead to a bbbbation of the channel between the J2 junction which allows the flow of current from collector to emitter. The flow of current is represented as the current path in the picture, when the applied Gate voltage VG increases the amount of current flow from the collector to the emitter also increases.The IGBT is classified as two types based on the n+ buffer layer, the IGBTs that are having the n+ buffer layer is called the Punch through IGBT (PT-IGBT), the IGBTs that does not have an n+ buffer layer are called the Non-Punch Through- IGBT (NPT- IGBT).
Based on their characteristics the NPT- IGBT, and PT-IGBT are named as symmetrical and nonsymmetrical IGBTs. The symmetrical IGBTs are the ones that have equal forward and reverse breakdown voltage. The asymmetric IGBTs are the ones that have a reverse breakdown voltage less than the forward breakdown voltage. The symmetrical IGBTs are mostly used in AC circuits, whereas the asymmetrical IGBTs are mostly used in DC circuits because they don’t need to support voltage in the reverse direction.The collector of the PNP transistor is connected to the NPN transistor through a JFET, the JFET connects the collector of the PNP transistor and the base of the PNP transistor. These transistors are arranged in a way to bbbb a parasitic thyristor set up to create a negative feedback loop. The Resistor RB is placed to short the base and emitter terminals of the NPN transistor to ensure that the thyristor doesn’t latch-up which leads to the latch-up of the IGBT. The JFET used here will signify the structure of current between any two IGBT cells and allows the MOSFET and supports most of the voltage.
品牌兴科
型号5SHY35L45103BHE014105R00
类型工业用
测量对象工控
测量范围25
测量精度0.001
流量范围8582
功率888
分辨率8874
电源220V
加工定制否
外形尺寸33
重量828
产地其他
厦门雄霸电子商务有限公司漳州办
- 公司类型私营有限责任公司
- 经营模式贸易公司-私营有限责任公司
- 联系人魏魏先生
- 联系手机18030177759
- 联系固话-18030177759
- 公司地址福建省厦门市
主营业务
主要做PLC DCS 机器人 伺服 四大系统的停产备件
厦门雄霸电子商务有限公司 是一家专业从事全球知名品牌（DCS系统）（机器人系统）（大型伺服控制系统）模块 备件销售,公司产品内容为分布式控制系统(DCS) 、可编程序控制器(PLC)、 MOTOROLA MVME工业用模组 、工业控制通訊转换器(Anybus) 、远端输出/输入模块(RTU) 、工业电脑(IPC)、 工业用低頻萤幕(IPC) 、人机界面SCSI(50、68、80Pin) AnyBus(Gateway)现已成一家全球性的工业自动化备件及零部件的销售企业。
Xiamen Xiongba is a professional engaged in the world famous brand (DCS system)(robot system)(large Servo control system) module, spare parts sales, the company's products are distributed control system DCS, Programmable logic controller, Motorola MVME industrial module, Industrial Control Communication Converter Anybus, remote output / input module RTU, industrial computer IPC, industrial low frequency screen IPC, human computer interface Scsi 50,68,80Pin Anybus Gateway.
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